Ieee ferlet-cavrois 2007 new insights

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Web12 apr. 2007 · Silicon-on-insulator circuits have been considered less sensitive to single event effects than devices made using bulk technology. However, model experiments have indicated that charge collection occurs not only from the active layer above the buried oxide (BOX) but also from the substrate below the BOX, contrary to the earlier belief. In this … WebIEEE Transactions on Aerospace and Electronic Systems. TAES Home; TAES Table of Contents; Executive Editorial Staff; Technical Areas and Editors; ... Veronique Ferlet-Cavrois. Veronique Ferlet-Cavrois. Outdated or incorrect contact information? Please click here to update us with the correct information.

Electronics Free Full-Text TAISAM: A Transistor Array-Based Test ...

WebThe sensitivity of SOI technologies to transient irradiations (both dose rate and heavy ions) is analyzed as a function of the technology architecture with experiments and simulations. Two main parameters are considered. First, the thickness of the silicon film, which determines the fully or partially depleted state of SOI devices. This parameter strongly … Web29 jun. 2024 · The heavy ion-induced sensitive area is an essential parameter for space application integrated circuits. Circuit Designers need it to evaluate and mitigate heavy ion-induced soft errors. However, it is hard to measure this parameter due to the lack of test structures and methods. In this paper, a test method called TAISAM was proposed to … guilford women\u0027s lacrosse

A New Technique for SET Pulse Width Measurement in Chains of …

Web1 jul. 2007 · Journal Name: IEEE Transactions on Nuclear Science, Dec. 2007 Additional Journal Information: Related Information: Proposed for publication in IEEE Transactions on Nuclear Science, Dec. 2007. Country of Publication: United States Language: English Citation Formats MLA APA Chicago BibTeX Web1 sep. 2008 · IEEE Transactions on Nuclear Science A new technique is developed to measure precisely and accurately the width of propagating voltage transients induced by … Web10 jan. 2024 · 1) Core model based on standard BSIMSOI [ 17] or EKV-SOI [ 18] platforms for submicron main transistor M front (front Si–SiO 2 interface) with parameters dependent on TID. The type of model platform is selected by designer. 2) Additional subcircuits taking into account radiation-induced effects. guilford what to do with used mattress

Influence of Beam Conditions and Energy for SEE Testing

Web9 jul. 2003 · IEEE Transactions on Nuclear Science 12 December 2007 The neutron-induced SEU sensitivity in the 1-10 MeV energy range is investigated using … WebIn the last years the number of micro and nanosatellites, respectively microsat and nanosat, has rapidly increased.These satellites allow testing, experimenting and proving several new ideas by reducing at the same time the overall costs of the missions [1,2].The increase in the number of microsats and nanosats and the augmented resolution of modern sensors … guilford woods college parkWebradiation hardening (electronics),NAND circuits,flash memories,ion beam effects,Monte Carlo methods,field programmable gate arrays,system-on-chip,three-dimensional … bouth lake district

"WebNMOS transistors were irradiated using X-ray, Co-60 gamma, electron, and proton radiation sources. The charge yield was estimated for protons of different energies and electrons … " - Ieee ferlet-cavrois 2007 new insights

Ieee ferlet-cavrois 2007 new insights

Web1 jun. 2004 · IEEE Transactions on Nuclear Science 2007 The transient radiation response of single- and multiple-gate fully depleted silicon-on-insulator (FD SOI) transistors is … Web1 sep. 2003 · Several types of thin transmission detectors have been developed to achieve this goal: thin plastic scintillators coupled to photomultiplier tubes 29,30 , thin silicon detectors 31,32 and gas...

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Web- "New Insights Into Single Event Transient Propagation in Chains of Inverters—Evidence for Propagation-Induced Pulse Broadening" Fig. 7. Mixed-mode simulation of SET … Web12 jun. 2013 · This paper presents a review of digital single event transient research, including: a brief historical overview of the emergence of SET phenomena, a review of …

Web12 jun. 2013 · This paper presents a review of digital single event transient research, including: a brief historical overview of the emergence of SET phenomena, a review of the present understanding of SET mechanisms, a review of the state-of-the-art in SET testing and modelling, a discussion of mitigation techniques, and a discussion of the impact of … WebA New Technique for SET Pulse Width Measurement in Chains of Inverters Using Pulsed Laser Irradiation . × Close Log In. Log in with Facebook Log in with Google. or. Email. Password. Remember me on this computer. or reset password. Enter the email address you signed up with and we'll email you a reset link. Need ...

WebIEEE Transactions on Nuclear Science, 64(1), 388-397. ... {Ruben Garcia} and Markus Brugger and Veronique Ferlet-Cavrois and Sytze Brandenburg and Jordan Calcutt and Francesco Cerutti and Eamonn Daly and Alfredo Ferrari and Michele Muschitiello and Giovanni Santin and Slawosz Uznanski and {Van Goethem}, Marc-Jan and Ali Zadeh", WebA New Technique for SET Pulse Width Measurement in Chains of Inverters Using Pulsed Laser Irradiation ... IEEE Transactions on Nuclear Science, 2000. Sylvain Girard. Philippe Paillet. Download Download PDF. Full PDF Package Download Full PDF Package. This Paper. A short summary of this paper ...

WebBased on the silicon-on-insulator (SOI) technology and radiation-hardened silicon gate (RSG) process, a radiation-hardened high-voltage lateral double-diffused MOSFET (LDMOS) device is presented in this paper. With the gate supply voltage of 30 V, the LDMOS device has a gate oxide thickness of 120 nm, and the RSG process is effective …

Web1 aug. 2012 · Authors: Veronique Ferlet-Cavrois James R. Schwank Sandra Liu Deakin University Michele Muschitiello European Space Agency Abstract and Figures The effects of heavy-ion test conditions and beam... guilford womens aidWebFerlet-Cavrois G. Gasiot C. Marcandella C. D'Hose O. Flament O. Faynot J. P. de Pontcharra C. Raynaud "Insights on the Transient Response of Fully and Partially … guilford women\u0027s soccerWebResistive memories workshop Véronique Ferlet -Cavrois ESTEC 30/04/2015 Slide 4 ESA UNCLASSIFIED – For Official Use . Memories in Space Applications . Payload … guilfordworks workforce development boardWeb14 okt. 2007 · Abstract. Researches on prototype AlGaN/GaN transistors provided evidence for their tolerance to cumulated dose effects. However, only few studies have been done to evaluate their sensitivity to ... guilford workforce development boardWebThe Omega-gate FET is shown to be the most tolerant to a 500 krad (SiO 2) total dose exposure thanks to the efficient control provided by the lateral gates over the electrostatic potential throughout the Si film and essentially at the Si fin/BOX interface Publication: IEEE Transactions on Nuclear Science Pub Date: December 2006 DOI: guilford women\u0027s basketballWeb16 mei 2013 · Published in: IEEE Transactions on Electron Devices ( Volume: 60 , Issue: 6 , June 2013 ) Article #: Page (s): 2001 - 2007 Date of Publication: 16 May 2013 ISSN Information: Print ISSN: 0018-9383 Electronic ISSN: 1557-9646 INSPEC Accession Number: 13502181 DOI: 10.1109/TED.2013.2256426 guilford womanWeb7. V. Ferlet-Cavrois "New insights into single event transient propagation in chains of inverters—evidence for propagation-induced pulse broadening" IEEE Trans. Nucl Sci. … guilford yale blood draw